SST308 SOT-23 3L ROHS

U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET AMPLIFIER FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE Gpg = 11.5dB U SERIES TO-18 TOP VIEW NF = 2.7dB ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) J SERIES TO-92 TOP VIEW Maximum Temperatures Storage Temperature -55 to 150°C Junction Operating Temperature -55 to 150°C Maximum Power Dissipation Continuous Power Dissipation (J/SST)4 350mW Continuous Power Dissipation (U)5 500mW SST SERIES SOT-23 TOP VIEW Maximum Currents Gate Current (J/SST) D 1 S 2 10mA Gate Current (U) 3 20mA G Maximum Voltages Gate to Drain -25V Gate to Source -25V COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage -25 VGS(F) Gate to Source Forward Voltage 0.7 IG TYP MAX 1.15 UNIT V CONDITIONS IG = -1µA, VDS = 0V IG = 10mA, VDS = 0V Gate Operating Current -15 pA VDG = 9V, ID = 10mA Drain to Source On Resistance 35 Ω VGS = 0V, ID = 1mA en Equivalent Noise Voltage 6 nV/√Hz NF Noise Figure Gpg Power Gain2 gfg Forward Transconductance rDS(on) gog IGSS Output Conductance f = 105MHz 1.5 f = 450MHz 2.7 f = 105MHz 16 f = 450MHz 11.5 f = 105MHz 14 f = 450MHz 13 f = 105MHz f = 450MHz 0.16 0.55 Gate Reverse Current Linear Integrated Systems dB VDS = 10V, ID = 10mA mS -1 • VDS = 10V, ID = 10mA, f = 100Hz nA VGS = -15V, VDS = 0V 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201117 07/25/2019 Rev#A7 ECN# U/J/SST 308 SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP VGS(off) Gate to Source Cutoff Voltage Current3 IDSS Source to Drain Saturation Ciss Input Capacitance Crss Reverse Transfer Capacitance gfs Forward Transconductance 14 gos Output Conductance 110 J/SST308 J/SST309 J/SST310 MIN MAX MIN MAX MIN MAX -1 -6.5 -1 -4 -2 -6.5 V VDS = 10V, ID = 1nA 12 75 12 30 24 75 mA VDS = 10V, VGS = 0V pF VDS = 10V, VGS = -10V f = 1MHz 4 1.9 8 10 250 8 UNIT mS 250 250 CONDITIONS VDS = 10V, ID = 10mA f = 1kHz µS SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP VGS(off) Gate to Source Cutoff Voltage Current3 IDSS Source to Drain Saturation Ciss Input Capacitance Crss Reverse Transfer Capacitance gfs Forward Transconductance 14 gos Output Conductance 110 U308 U309 U310 UNIT CONDITIONS MIN MAX MIN MAX MIN MAX -1 -6.5 -1 -4 -2.5 -6.5 V VDS = 10V, ID = 1nA 12 75 12 30 24 75 mA VDS = 10V, VGS = 0V pF VDS = 10V, VGS = -10V f = 1MHz 4 5 5 5 1.9 2.5 2.5 2.5 10 10 250 10 250 mS 250 VDS = 10V, ID = 10mA f = 1kHz SOT-23 SOT-23 TO-92 TO-18 µS 0.89 1.03 0.37 0.51 1 1.78 2.05 0.210 0.170 2.80 3.04 3 2 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Measured at optimum input noise match 3. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% 4. Derate 2.8mW/ºC above 25ºC 5. Derate 4mW/ºC above 25ºC Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear Systems, founded in 1987, uses patented and proprietary processes and designs to create its high performance discrete semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company founder John H. Hall. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201117 07/25/2019 Rev#A7 ECN# U/J/SST 308